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| AM80912-005 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .REFRACTORY/ .EMI .5: .LOW .I .OVERLAY .METAL/ .P G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 6.0 W MIN. WITH 9.3 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM80912-005 BRANDING 80912-5 PIN CONNECTION DESCRIPTION The AM80912-005 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM80912-005 i s housed in the unique IMPACTM Hermetic Metal/Ceramic package with ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 75C) 25 0.9 32 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 7.0 C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM80912-005 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 1mA IE = 1mA IC = 5mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10 VCE = 28V IC = 250mA 48 3.5 48 -- 30 -- -- -- -- -- -- -- -- 0.5 300 V V V mA -- DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit POUT c GP Note: f = 960 -- 1215MHz f = 960 -- 1215MHz f = 960 -- 1215MHz PIN = 0.7W PIN = 0.7W PIN = 0.7W VCC = 28V VCC = 28V VCC = 28V 6.0 45 9.3 -- -- -- -- -- -- W % dB Pul se format: 6.4 S on 6.6 S off , repeat f or 3.3 ms, then off for 4.5125 ms. Duty Cycle: Burst 49.2%, overall 20.8% 2/4 AM80912-005 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN L ZIN H ZCL TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L H FREQ. L = 960 MHz M = 1090 MHz H = 1215 MHz ZIN () 8.2 + j 8.52 11.1 + j 8.34 15.6 + j 6.8 ZCL () 10.5 + j 12.9 9.4 + j 11.3 9.0 + j 8.3 PIN = 0.7 W VCC = 28 V Normalized to 50 ohms TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 C4 : : : : 100 F Electrolytic Capacitor, 63V .1 F Ceramic Capacitor Feedthrough Bypass SCI 712-022 .6 -- 4.5 pF, 2 pls, Johanson Gigatrim Capacitor C5 C6 L1 L2 : : : : .6 -- 4.5 pF, 2 pls, Johanson Gigatrim Capacitor 100 pF Chip Capacitor No. 26 Wire, 4 Turn No. 26 Wire, 4 Turn 3/4 AM80912-005 PACKAGE MECHANICAL DATA .318/ .306 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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